Large area, low power MoSe<sub>2</sub> nanostructures based Infrared photodetectors on flexible substrates beyond $2.3\ \mu\mathrm{m}$-Reference-Cited by-同舟云学术

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Large area, low power MoSe₂ nanostructures based Infrared photodetectors on flexible substrates beyond $2.3\ \mu\mathrm{m}$

Published:2020-11-26 Issue: Volume: Page:
ISSN:
Container-title:2020 5th IEEE International Conference on Emerging Electronics (ICEE)
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Author:

J John Wellington¹,Dhyani Veerendra¹,Maity Sarmistha²,Mukherjee Subharjit³,Ray Samit K⁴,Das Samaresh¹

Affiliation:

1. Centre for Applied Research in Electronics, Indian Institute of Technology Delhi,New Delhi,India

2. Indian Institute of Technology Delhi,Department of Physics,New Delhi,India

3. Indian Institute of Technology Kharagpur,Department of Physics,Kharagpur,India

4. S N Bose National Centre for Basic Sciences,Kolkata,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9776592/9776648/09776758.pdf?arnumber=9776758

Reference20 articles.

1. High performance infrared photodetectors up to 28 µm wavelength based on lead selenide colloidal quantum dots

2. Highly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed

3. High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

4. Flexible low–cost infrared photodetector based on SnS thin film grown by chemical bath deposition

5. Characterization of MoSe2 thin film deposited at room temperature from solution phase

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