Geometrically Dependent Space Charge Modulation and Quasi-saturation Effect in Superjunction-LDMOS Device
Author:
Affiliation:
1. Centre for Applied Research in Electronics, Indian Institute of Technology Delhi,Delhi,India
2. Indian Institute of Science,Dept. of Electronic Systems Engineering,Bengaluru,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9776592/9776648/09776875.pdf?arnumber=9776875
Reference15 articles.
1. A novel superjunction lateral double-diffused MOS with segmented buried P-layer
2. Impact of Space Charge Modulation on Superjunction-LDMOS
3. Performance and Reliability Codesign for Superjunction Drain Extended MOS Devices
4. Kirk effect limitations in high voltage IC's
5. Part II: RF, ESD, HCI, SOA, and Self Heating Concerns in LDMOS Devices Versus Quasi-Saturation
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