Effect of In-homogeneities on Schottky barrier height & Richardson constant of Ni-AlGaN/GaN Schottky contact-Reference-Cited by-同舟云学术

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Effect of In-homogeneities on Schottky barrier height & Richardson constant of Ni-AlGaN/GaN Schottky contact

Published:2020-11-26 Issue: Volume: Page:
ISSN:
Container-title:2020 5th IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Visvkarma Ajay Kumar¹,Chanchal ²,Sharma Chandan³,Saini Navneet Kaur²,Saxena Manoj⁴,Laishram Robert²,Rawal D S²

Affiliation:

1. University of Delhi,Semiconductor Device Research Laboratory,Department of Electronic Science,New Delhi,India,110021

2. Solid State Physics Laboratory,New Delhi,India,110054

3. Indian Institute of Technology,New Delhi,India,110016

4. Deen Dayal Upadhyaya College, University of Delhi,Department of Electronics,New Delhi,India,110078

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9776592/9776648/09777042.pdf?arnumber=9777042

Reference19 articles.

1. Conductance Deep-Level Transient Spectroscopy and Current Transport Mechanisms in Au|Pt|n-GaN Schottky Barrier Diodes

2. Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode

3. Current-Voltage-Temperature (I-V-T) Characteristics of Schottky-Gate of the Structures AlGaN/GaN HEMTs;mostefaoui;Sensors & Transducers,2014

4. Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers

5. Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

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