Modeling of $0.18\mu\mathrm{m}$ RF Bulk and SOI Planar MOSFETs using Industry Standard BSIM Models
Author:
Affiliation:
1. Indian Institute of Technology,Dept. of Electrical Engineering,Delhi,India
2. Indian Institute of Technology,Dept. of Electrical Engineering,Kanpur,India
3. Semiconductors Laboratory,Department of Space,Chandigarh,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9776592/9776648/09776772.pdf?arnumber=9776772
Reference18 articles.
1. BSIM-BULK: Accurate Compact Model for Analog and RF Circuit Design
2. Improved Modeling of Bulk Charge Effect for BSIM-BULK Model
3. Evaluation of 10-nm Bulk FinFET RF Performance—Conventional Versus NC-FinFET
4. Linearity and low-noise performance of SOIMOSFETs for RF applications
5. MOSFET Modeling for RF IC Design
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1. DC and RF Small Signal Modeling of 28nm Planar MOSFET;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20
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