On the linearity and parabolicity of the PIN dark IV: the effect of series resistance

Author:

Roy Choudhury Aditya N.1,Sarkar Shaibal K.1

Affiliation:

1. Indian Institute of Technology Bombay,Department of Energy Science and Engineering,Mumbai,India

Funder

IIT Bombay

Publisher

IEEE

Reference7 articles.

1. A simplified theory of the p-i-n diode

2. The forward characteristic of silicon power rectifiers at high current densities

3. Simulations of variable I layer thickness effects on silicon PIN diode IV characteristics;jubadi;IEEE Symposium on Industrial Electronics and Applications (ISIEA 2010),0

4. Exact analytical solution for current flow through diode with series resistance

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