Analysis of the early voltage in bipolar transistors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31957/01485922.pdf?arnumber=1485922
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Flyback PFC With a Series-Pass Module in Cascode Structure for Input Current Shaping;IEEE Transactions on Power Electronics;2019-06
2. A new approach for direct observation of base width modulation in vertical bipolar transistors;IEEE Transactions on Electron Devices;1995
3. Solution of a nonlinear Poisson’s equation for the potential of impurity ions in semiconductors with a spatially variable dielectric constant by an equivalent variational method;Physical Review B;1992-11-15
4. An improved Early voltage model for advanced bipolar transistors;IEEE Transactions on Electron Devices;1991
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