Subthreshold conduction in silicon-on-sapphire transistors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31831/01481626.pdf?arnumber=1481626
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-mobility CMOS transistors fabricated on very thin SOS films;IEEE Transactions on Electron Devices;1989-03
2. Improved subthreshold characteristics of n-channel MOS transistors fabricated in solid phase epitaxially regrown silicon-on-sapphire films;IEEE Electron Device Letters;1989-01
3. Growth and properties of high-quality very-thin SOS films;Journal of Electronic Materials;1989-01
4. Interface-state measurement on SOS using the charge-pumping technique on gated-diode test structures;IEEE Transactions on Nuclear Science;1988
5. Channel ion implantation for small-geometry high-performance CMOS-SOS circuits;IEEE Transactions on Electron Devices;1986-03
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