Gigahertz logic based on InP metal-insulator-semiconductor field-effect transistors by vapor phase epitaxy-Reference-Cited by-同舟云学术

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Gigahertz logic based on InP metal-insulator-semiconductor field-effect transistors by vapor phase epitaxy

Published:1987-09 Issue:9 Volume:34 Page:1897-1901
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Antreasyan A.,Garbinski P.A.,Mattera V.D.,Wiesenfeld J.M.,Tucker R.S.,Shah N.J.,DiGiuseppe M.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31981/01486884.pdf?arnumber=1486884

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Homojunction Field-Effect and Bipolar Transistors;Physics of High-Speed Transistors;1993

2. High-Speed Devices and Integrated Circuits;Physics of High-Speed Transistors;1993

3. Chapter 5 Direct Optical Probing of Integrated Circuits and High-Speed Devices;Measurement of High-Speed Signals in Solid State Devices;1990

4. Liquid and Vapor Phase Growth of III-V Materials for Photonic Devices;AT&T Technical Journal;1989-01-02

5. The effect of phosphorous and sulfur treatment on the surface properties of InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1988-07

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