Electron velocity in short samples of Ga0.47In0.53As at 300 K-Reference-Cited by-同舟云学术

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Electron velocity in short samples of Ga0.47In0.53As at 300 K

Published:1986-06 Issue:6 Volume:33 Page:788-791
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nag B.R.,Ahmed S.R.,Roy M.D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31953/01485786.pdf?arnumber=1485786

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Terahertz-frequency InN/GaN heterostructure-barrier varactor diodes;Journal of Physics: Condensed Matter;2008-08-21

2. Modeling the frequency response of p+InP/n−InGaAs/n+InP photodiodes with an arbitrary electric field profile;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;2007-08-14

3. On the Performance Analysis and Design of an Integrated Front-End PIN/HBT Photoreceiver;IEEE Journal of Quantum Electronics;2004-01

4. On the optimum design of the front-end PIN-heterojunction bipolar transistor optoelectronic integrated circuit photoreceiver;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-05

5. A review of III–V semiconductor based metal-insulator-semiconductor structures and devices;Thin Solid Films;1993-08

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