Optimization of oxygen-implanted silicon substrates for CMOS devices by electrical characterization-Reference-Cited by-同舟云学术

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Optimization of oxygen-implanted silicon substrates for CMOS devices by electrical characterization

Published:1986-03 Issue:3 Volume:33 Page:354-360
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Foster D.J.,Butler A.L.,Bolbot P.H.,Alderman J.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31950/01485711.pdf?arnumber=1485711

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrasonic Tomographic Imaging of an Encased, Highly Attenuating Solid Medium;Research in Nondestructive Evaluation;2001-09

2. A Novel Body-Tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode;ETRI Journal;1996-01-01

3. Synthesis of buried insulating layers in silicon by ion implantation;Materials Chemistry and Physics;1992-06

4. A novel body contact for SIMOX based SOI MOSFETs;Solid-State Electronics;1991-10

5. Advanced Silicon on Insulator Materials: Processing, Characterization and Devices;Semiconductor Silicon;1989

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