Elementary ambipolar field-effect transistor model
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31948/01485668.pdf?arnumber=1485668
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. High Gain Pseudo-Inverter Based on Silicon-on-Insulator With Ambipolar Transport;IEEE Transactions on Electron Devices;2022-08
3. Quasi-Fermi-Level Phase Space and its Applications in Ambipolar Two-Dimensional Field-Effect Transistors;Physical Review Applied;2022-05-17
4. Seven Strategies to Suppress the Ambipolar Behaviour in CNTFETs: a Review;Silicon;2022-03-26
5. Organic-based inverters: basic concepts, materials, novel architectures and applications;Chemical Society Reviews;2020
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