Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
Funder
Startup Research Grant (SRG) from Science and Engineering Research Board
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Reference31 articles.
1. A 176-stacked 512Gb 3b/cell 3D-NAND flash with 10.8 Gb/mm 2density with a peripheral circuit under cell array architecture;park;Proc IEEE Int Solid-State Circuits Conf (ISSCC),0
2. A 1Tb 3b/cell 8th-generation 3D-NAND flash memory with 164 MB/s write throughput and a 2.4 Gb/s interface;kim;Proc IEEE Int Solid-State Circuits Conf (ISSCC),2022
3. Hardware Security Primitive Exploiting Intrinsic Variability in Analog Behavior of 3-D NAND Flash Memory Array
4. Mitigating the Impact of Channel Tapering in Vertical Channel 3-D NAND
5. Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regions