Robust Bidirectional Gate Driver on Array Based on Indium Gallium Zinc Oxide Thin-Film Transistor for In-Cell Touch Displays-Reference-Cited by-同舟云学术

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Robust Bidirectional Gate Driver on Array Based on Indium Gallium Zinc Oxide Thin-Film Transistor for In-Cell Touch Displays

Published:2024 Issue: Volume:12 Page:662-667
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Zhou Liufei¹^ORCID,He Fuchao²,Guo Xiaojun²^ORCID,Wang Haihong³,Wang Mingxin¹,Zhang Yuning¹^ORCID,Wang Baoping¹

Affiliation:

1. School of Electronic Science and Engineering, Southeast University, Nanjing, China

2. School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China

3. Research and Development Department, Nanjing BOE Display Technology Company Ltd., Nanjing, China

Funder

Basic Research Program of Jiangsu Province

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/6245494/10416702/10559899.pdf?arnumber=10559899

Reference22 articles.

1. Automotive Electromagnetic Compatibility Standard Specific Pulse Driving Method for Advanced In-Cell Touch Sensor

2. Large Size In-Cell Capacitive Touch Panel and Force Touch Development for Automotive Displays

3. In-Cell Self-Capacitive-Type Mobile Touch System and Embedded Readout Circuit in Display Driver IC

4. 60.2:Invited Paper: Advanced In-cell Touch Technology for Large Sized Liquid Crystal Displays

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