Four Hybrid Gates SOI Lateral Insulated Gate Bipolar Transistor With Improved Carrier Controllability-Reference-Cited by-同舟云学术

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Four Hybrid Gates SOI Lateral Insulated Gate Bipolar Transistor With Improved Carrier Controllability

Published:2023 Issue: Volume:11 Page:288-293
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Ma Jie¹,Gu Yong¹,Pan Chengwu¹,Zhang Long¹^ORCID,Zheng Guiqiang¹,Liu Siyang²^ORCID,Sun Weifeng²^ORCID,Chang Changyuan¹,Zhang Sen³

Affiliation:

1. National ASIC System Engineering Research Center, School of Microelectronics, Southeast University, Nanjing, China

2. National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China

3. Department of Technology Design, CSMC Technologies Corporation, Wuxi, China

Funder

National Natural Science Foundation of China

Distinguished Young Scholars Program, Southeast University

Technological Achievements of Jiangsu Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/10049274/10121749.pdf?arnumber=10121749

Reference17 articles.

1. Low-Loss SOI-LIGBT With Triple Deep-Oxide Trenches

2. Low-Loss SOI-LIGBT With Dual Deep-Oxide Trenches

3. A Novel Double-RESURF SOI-LIGBT With Improved $V_{\mathrm{\scriptscriptstyle ON}}-{E}_{ \mathrm{\scriptscriptstyle OFF}}$ Tradeoff and Low Saturation Current

4. U-shaped channel SOI-LIGBT with dual trenches to improve the trade-off between saturation voltage and turn-off loss

5. A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET

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