Scalable Small Signal and Noise Modeling of InP HEMT for THz Application
Author:
Affiliation:
1. School of Transportation and Civil Engineering, Nantong University, Nantong, China
2. School of Physics and Electronic Science, East China Normal University, Shanghai, China
Funder
National Natural Science Foundation of China
Open-Foundation of State Key Laboratory of Millimeter-Waves
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/10049274/10147218.pdf?arnumber=10147218
Reference16 articles.
1. A new noise model of HFET with special emphasis on gate-leakage
2. Noise modeling and measurement techniques (HEMTs)
3. Scalable small-signal and noise modeling for deep-submicrometer MOSFETs;gao;IEEE Trans Microw Theory Techn,2009
4. Analytical noise model with the influence of shot noise induced by the gate leakage current for submicrometer gate-length high-electron-mobility transistors
5. Signal and noise properties of gallium arsenide field effect transistors;pucel;Advances in Electronics and Electron Physics,1974
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1. An Improved Nonlinear I‐V Model for GaN HEMTs;International Journal of RF and Microwave Computer-Aided Engineering;2024-01
2. An Ameliorated Small-Signal Model Parameter Extraction Method for GaN HEMTs up to 110 GHz with Short-Test Structure;Active and Passive Electronic Components;2023-11-21
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