Achieving High-Performance Solution-Processed Thin-Film Transistors by Doping Strong Reducibility Element Into Indium-Zinc-Oxide
Author:
Affiliation:
1. Polytechnic Institute, Zhejiang University, Hangzhou, China
2. School of Micro-Nano Electronics, Zhejiang University, Hangzhou, China
3. Institute of Microelectronics, Peking University, Beijing, China
Funder
National Natural Science Foundation of China
Major Scientific Research Project of Zhejiang Lab
Zhejiang Province Key Research and Development Programs
Zhejiang Provincial Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/10049274/10159260.pdf?arnumber=10159260
Reference27 articles.
1. Solution-Processed Rb-Doped Indium Zinc Oxide Thin-Film Transistors
2. In-Situ Investigation of the Gate Bias Instability of Tungsten-Doped Indium Zinc Oxide Thin Film Transistor by Simultaneous Ultraviolet and Thermal Treatment
3. Projector augmented-wave method
4. Effect of Li-doping on low temperature solution-processed indium–zinc oxide thin film transistors
5. High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors
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1. Investigation of Donor-like State Distributions in Solution-Processed IZO Thin-Film Transistor through Photocurrent Analysis;Nanomaterials;2023-11-21
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