Improving the Performance of Charge Trapping Memtransistor as Synaptic Device by Ti-Doped HfO2
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Published:2021
Issue:
Volume:9
Page:137-143
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ISSN:2168-6734
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Container-title:IEEE Journal of the Electron Devices Society
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language:
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Short-container-title:IEEE J. Electron Devices Soc.
Author:
Chou Yu-CheORCID,
Chung Wan-HsuanORCID,
Tsai Chien-Wei,
Yi Chin-Ya,
Chien Chao-HsinORCID
Funder
Ministry of Science and Technology, Taiwan
“Center for the Semiconductor Technology Research”
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology