CNTFET-based design of low power charge pump technique-based voltage multiplier

Author:

Rajora Ricky1,Sharma Kulbhushan1,Gupta Lipika2,Sachdeva Ashish2

Affiliation:

1. Chitkara University Institute of Engineering and Technology, Chitkara University,VLSI Centre of Excellence,Punjab,India

2. Chitkara University Institute of Engineering and Technology, Chitkara University,Department of Electronics & Communication Engineering,Punjab,India

Publisher

IEEE

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Performance Analysis of Ternary NAND Gate Based on FinFET Models;2023 3rd International Conference on Smart Generation Computing, Communication and Networking (SMART GENCON);2023-12-29

2. Design and Analysis of FinFET Based Ternary Multiplexer;2023 2nd International Conference on Futuristic Technologies (INCOFT);2023-11-24

3. High Performance Ternary Inverter based on FinFET Models;2023 International Conference on System, Computation, Automation and Networking (ICSCAN);2023-11-17

4. A high voltage charge pump circuit for H bridge high side drive;Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering;2023-10-20

5. Low Power and High Performance 4 Stage Cross Connected Charge Pump Using CNTFET;2023 3rd Asian Conference on Innovation in Technology (ASIANCON);2023-08-25

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