An LLC Converter Based on SiC MOSFETs and Minimized-leakage-inductance Planar Transformer-Reference-Cited by-同舟云学术

An LLC Converter Based on SiC MOSFETs and Minimized-leakage-inductance Planar Transformer

Published:2023-05-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Conference on Power Science and Technology (ICPST)
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Author:

Zhou Xuetong¹,Tian Yufei¹,Quan Yuhua¹,Feng Junhong¹,Lu Wenyu¹,Zheng Li¹,Cheng Xinhong¹,Yu Yuehui¹

Affiliation:

1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics,Shanghai,China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Shanghai Rising-Star Program

Science and Technology Commission of Shanghai Municipality

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10164831/10164814/10165339.pdf?arnumber=10165339

Reference7 articles.

1. A Design Method of Partially Interleaved Winding Structure With Low Leakage Inductance for Planar Transformer Application

2. High Power Density 1 MHz 3 kW 400 V-48 V LLC Converter for Datacenters with improved Core Loss and Termination Loss

3. High-Performance Digital Multiloop Control of LLC Resonant Converters for EV Fast Charging With LUT-Based Feedforward and Adaptive Gain

4. Three Phase LLC Series Resonant DC/DC Converter Using SiC MOSFETs to Realize High Voltage and High Frequency Operation

5. A 300-kHz 6.6-kW SiC Bidirectional LLC Onboard Charger

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