Snubber Circuit Parameters Design for IGCT Considering Clamping Diode Reverse Recovery Process
Author:
Affiliation:
1. CAS,Institute of Plasma Physics,Hefei,China
Funder
National Natural Science Foundation of China
Chinese Academy of Sciences
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10164831/10164814/10165096.pdf?arnumber=10165096
Reference21 articles.
1. Diode Reverse Recovery Process and Reduction of a Half-Wave Series Cockcroft–Walton Voltage Multiplier for High-Frequency High-Voltage Generator Applications
2. Improved performance of new fast recovery high voltage diode chip set of 3.3kV and 6.5kV;islam;2018 20th European Conference on Power Electronics and Applications,2018
3. A Novel Boost Resonant Converter for Solar Renewable Energy Applications;rao;Inenaiona Jounal of letica and Electronic Engineering & Telecommunications,2015
4. Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes
5. Accurate Extraction Method of Reverse Recovery Time and Stored Charge for Ultrafast Diodes
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