A Compact Model for Si-Ge Avalanche Photodiodes Over a Wide Range of Multiplication Gain
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/50/8720127/08698878.pdf?arnumber=8698878
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Compact Modeling of Key Passive Silicon Photonic Components for a Process Design Kit;2023 IEEE Photonics Conference (IPC);2023-11-12
2. Waveguide-Integrated Ge/Si Avalanche Photodiode with Vertical Multiplication Region for 1310 nm Detection;Photonics;2023-06-29
3. Equivalent Measurement and Real-Time Compensation of Error Caused by Intensity Change in Deep Sub-Nanometer Displacement Measuring Interferometry;Photonics;2022-09-30
4. Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction;Photonics Research;2022-07-28
5. High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz;Optica;2022-07-05
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