Exact Analytical Formula for the Excess Noise Factor for Mixed Carrier Injection Avalanche Photodiodes

Author:

Hossain Md. MottalebORCID,David John P. R.,Hayat Majeed M.ORCID

Funder

Sandia National Laboratories

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate;Applied Physics Letters;2023-09-25

2. Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs;Sensors;2023-06-06

3. Threshold Switching by Bipolar Avalanche Multiplication in Ovonic Chalcogenide Glasses;Advanced Electronic Materials;2023-04-28

4. 32  Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon;Optics Letters;2021-08-02

5. Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44;Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III;2020-10-13

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