Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility-Reference-Cited by-同舟云学术

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Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility

Published:2002-03 Issue:3 Volume:49 Page:490-499
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Reggiani S.,Valdinoci M.,Colalongo L.,Rudan M.,Baccarani G.,Stricker A.D.,Illien F.,Felber N.,Fichtner W.,Zullino L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/21259/00987121.pdf?arnumber=987121

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