Author:
Anderson W.T.,Gerdes J.,Roussos J.A.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Temperature Dependence Survey for a 2.5-2.9 GHz GaAs Power Amplifier;2024 IEEE 7th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC);2024-03-15
2. RADIATION EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS;International Journal of High Speed Electronics and Systems;2003-03
3. GaAs Based Field Effect Transistors for Radiation-Hard Applications;Radiation Effects in Advanced Semiconductor Materials and Devices;2002
4. Dose rate and total dose dependence of low frequency noise performance, I-V curves and sidegating for GaAs MESFETs;IEEE Transactions on Nuclear Science;1998-12