High-Power MM-Wave Sources based on Schottky Diodes-Reference-Cited by-同舟云学术

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High-Power MM-Wave Sources based on Schottky Diodes

Published:2018-09 Issue: Volume: Page:
ISSN:
Container-title:2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
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Author:

Cojocari Oleg,Moro-Melgar Diego,Oprea Ion,Hoefle Matthias,Rickes Martin

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8491395/8509838/08509861.pdf?arnumber=8509861

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Design of a Monolithic Wideband GaN-Based Frequency Doubler for G-Band;2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC);2023-11-10

2. High-Efficiency GaN/SiC Doubler Terahertz Monolithic Integrated Circuit at 175 GHz;IEEE Electron Device Letters;2023-03

3. High-Efficiency D-Band Monolithically Integrated GaN SBD-Based Frequency Doubler With High Power Handling Capability;IEEE Transactions on Electron Devices;2022-09

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