Radiation Characterization of a Backside-Illuminated P-Type Photo-MOS Pixel With Gamma Rays and Fusion-Induced Neutrons-Reference-Cited by-同舟云学术

Radiation Characterization of a Backside-Illuminated P-Type Photo-MOS Pixel With Gamma Rays and Fusion-Induced Neutrons

Published:2022-03 Issue:3 Volume:69 Page:534-541
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Malherbe Victor¹^ORCID,Roy Francois¹^ORCID,Nier Olivier¹,Dalleau Thomas¹,De Paoli Serge¹^ORCID,Roche Philippe¹,Autran Jean-Luc²^ORCID,Dentan Martin³,Lu Guo-Neng⁴

Affiliation:

1. STMicroelectronics, Crolles Cedex, France

2. IM2NP, UMR7334, CNRS, Aix-Marseille University, Marseille, France

3. ITER Organization, Saint-Paul-lez-Durance, France

4. Institut des Nanotechnologies de Lyon (INL), Université Claude Bernard Lyon 1, Villeurbanne, France

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9735177/09701929.pdf?arnumber=9701929

Reference21 articles.

1. Radiation response of floating gate EEPROM memory cells

2. Generic Radiation Hardened Photodiode Layouts for Deep Submicron CMOS Image Sensor Processes

3. Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

4. Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors

5. Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Total Ionizing Dose Effects on a CDTI-Based CCD-on-CMOS Through Buildup of Interface Traps and Oxide Charges;IEEE Transactions on Nuclear Science;2024-08

2. Radiation Hardness of Modern Photogate Pixels Under Total Ionizing Dose: Impact of Pixel Pitch and Electron or Hole Collection;IEEE Transactions on Nuclear Science;2024-08

3. Ionizing Radiation Effects on Hole Collection Backside-Illuminated p-Type Deep-Trench-Pinned Photo-MOS Pixels Under Image Acquisition;IEEE Transactions on Nuclear Science;2023-08