Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type $p$-GaN Gate HEMTs
Author:
Affiliation:
1. The Hong Kong University of Science and Technology,Dept. of Electronic and Computer Engineering,Hong Kong,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147398.pdf?arnumber=10147398
Reference22 articles.
1. Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors
2. VTHinstability of p-GaN gate HEMTs under static and dynamic gate stress;he;IEEE Electron Device Lett,2018
3. Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy
4. Gate-geometry dependence of dynamic Vt in p-GaN gate HEMTs
5. Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs
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1. Quantum coupling and self-heating impacts on threshold voltages of GaN metal–insulator-semiconductor high-electron-mobility transistors;Results in Physics;2024-09
2. Enhanced performance of normally-OFF GaN HEMTs with stair-shaped p-GaN cap layer;Journal of Physics D: Applied Physics;2024-05-30
3. Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure;IEEE Transactions on Electron Devices;2024-04
4. Gate Characteristics of Enhancement-Mode Fully Depleted p-GaN Gate HEMT;IEEE Electron Device Letters;2023-12
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