Stability Analysis of Parallel SiC power MOSFETs based on a Virtual Prototype
Author:
Affiliation:
1. APS Laboratory, ETH Zurich,Zurich,Switzerland
2. Infineon Technologies AG,Neubiberg,Germany
3. University of L'Aquila,L'Aquila,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147660.pdf?arnumber=10147660
Reference9 articles.
1. Circuit synthesis techniques of rational models of electromagnetic systems: A tutorial paper
2. Transient stability analysis of discrete and multi-chip power semicon-ductor packages;popescu;Proc IEEE Int Symp Power Semicond Devices ICs (ISPSD),2021
3. Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention
4. Stability modeling for multi chip sic mosfet power modules;shen;Proc of 12th Int Conf on Integrated Power Electronics Systems (CIPS),2022
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Role of the Gate Resistance and Device Variability on the Dynamic Performance of Parallel SiC Power MOSFETs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
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