Fabrication of Ampere-Class $p$-Cu2O/$n-\beta$-Ga2O3 Trench Heterojunction Barrier Schottky Diodes and Double-Pulse Evaluation-Reference-Cited by-同舟云学术

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Fabrication of Ampere-Class $p$-Cu₂O/$n-\beta$-Ga₂O₃ Trench Heterojunction Barrier Schottky Diodes and Double-Pulse Evaluation

Published:2023-05-28 Issue: Volume: Page:
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Container-title:2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Takatsuka Akio¹,Miyamoto Hironobu¹,Sasaki Kohei¹,Kuramata Akito¹

Affiliation:

1. Novel Crystal Technology, Inc.,Sayama-shi,Sayama,Japan,350-1328

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147584.pdf?arnumber=10147584

Reference22 articles.

1. Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities

2. β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

3. A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode

4. β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

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