Experimental Study on SOI LIGBT with Field Plate Resistances at Anode Side-Reference-Cited by-同舟云学术

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Experimental Study on SOI LIGBT with Field Plate Resistances at Anode Side

Published:2023-05-28 Issue: Volume: Page:
ISSN:
Container-title:2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Wei Jie¹,Zhu Pengchen¹,Wei Yuxi¹,Yang Kemeng²,Li Jie¹,Wang Junnan¹,Dai Kaiwei¹,Song Hua³,Zhang Sen³,Zhang Wentong¹,Zhang Bo¹,Luo Xiaorong¹

Affiliation:

1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,P. R. China

2. Nanjing University of Posts and Telecommunications,Nanjing,P. R. China

3. CSMC Technologies Corporation,Wuxi,P. R. China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147585.pdf?arnumber=10147585

Reference19 articles.

1. A high current density SOI-LIGBT with Segmented Trenches in the Anode region for suppressing negative differential resistance regime

2. 800 V lateral IGBT in bulk Si for low power compack SMPS applications;trajkovic;Proc Int Symp Power Semiconductor Devices ICs,2013

3. A snapback-free shorted-anode SOI LIGHT with multi-segment anode

4. Electrical Characteristic Study of an SOI-LIGBT With Segmented Trenches in the Anode Region

5. 700 V segmented anode LIGBT with low on-resistance and onset Voltage

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Float P-Drift and Blocking Junction LIGBT With Low Turn-Off Loss and No-Snapback;IEEE Access;2024

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