Electromigration Failure Mechanisms of Cu-Cu Joints at Low Stressing Temperatures
Author:
Affiliation:
1. National Yang Ming Chiao Tung University,Department of Materials Science and Engineering,Hsinchu,Taiwan,300093
Funder
National Science and Technology Council
Semiconductor Research Corporation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10564841/10564831/10564917.pdf?arnumber=10564917
Reference17 articles.
1. Cu-Cu wafer bonding: An enabling technology for three-dimensional integration
2. Chip to Wafer Hybrid Bonding with Cu Interconnect: High Volume Manufacturing Process Compatibility Study
3. Novel stacked CMOS image sensor with advanced Cu2Cu hybrid bonding
4. Low-Temperature Cu/SiO2 Hybrid Bonding with Low Contact Resistance Using (111)-Oriented Cu Surfaces
5. Microwave Transmission Line Design Across Split Reference Planes
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