Electrical Characterization and Reliability Studies of Nano-TSV
Author:
Affiliation:
1. Technology and Research (A*STAR),Institute of Microelectronics (IME), Agency for Science,Republic of Singapore,138634
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10564841/10564831/10565087.pdf?arnumber=10565087
Reference12 articles.
1. Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails
2. Structural Reliability and Performance Analysis of Backside PDN
3. Enabling Logic with Backside Connectivity via n-TSVs and its Potential as a Scaling Booster;Veloso
4. Intel PowerVia Technology: Backside Power Delivery for High Density and High-Performance Computing
5. Extreme Wafer Thinning and nano-TSV processing for 3D Heterogeneous Integration
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