Dose rate and total dose dependence of the 1/f noise performance of a GaAs operational amplifier during irradiation-Reference-Cited by-同舟云学术

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Dose rate and total dose dependence of the 1/f noise performance of a GaAs operational amplifier during irradiation

Published:1995-12 Issue:6 Volume:42 Page:1615-1621
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Hiemstra D.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx1/23/10517/00488757.pdf?arnumber=488757

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs Based Field Effect Transistors for Radiation-Hard Applications;Radiation Effects in Advanced Semiconductor Materials and Devices;2002

2. Dose rate and total dose dependence of low frequency noise performance, I-V curves and sidegating for GaAs MESFETs;IEEE Transactions on Nuclear Science;1998-12

3. Toward a very low-power integrated charge preamplifier by using III-V field effect transistors;IEEE Transactions on Nuclear Science;1998-06

4. Dose rate and total dose 1/f noise performance of GaAs heterojunction bipolar transistors;IEEE Transactions on Nuclear Science;1996-12

5. Simultaneous cryogenic temperature (77 K) and total dose ionizing radiation effects on COTS amplifiers;2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588)

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