Replacing 6T SRAMs with 3T1D DRAMs in the L1 Data Cache to Combat Process Variability-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Replacing 6T SRAMs with 3T1D DRAMs in the L1 Data Cache to Combat Process Variability

Published:2008-01 Issue:1 Volume:28 Page:60-68
ISSN:0272-1732
Container-title:IEEE Micro
language:
Short-container-title:IEEE Micro

Author:

Liang Xiaoyao,Canal Ramon,Wei Gu-Yeon,Brooks David

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Link

http://xplorestaging.ieee.org/ielx5/40/4460501/04460513.pdf?arnumber=4460513

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of FinFET-Based Gain Cells for Low Power Sub-VT Embedded DRAMs;Journal of Low Power Electronics;2018-06-01

2. Review on suitable eDRAM configurations for next nano-metric electronics era;International Journal of the Society of Materials Engineering for Resources;2018-03-31

3. Sthira: A Formal Approach to Minimize Voltage Guardbands under Variation in Networks-on-Chip for Energy Efficiency;2017 26th International Conference on Parallel Architectures and Compilation Techniques (PACT);2017-09

4. Statistical Analysis and Comparison of 2T and 3T1D e-DRAM Minimum Energy Operation;IEEE Transactions on Device and Materials Reliability;2017-03

5. Design of 8T Volatile and Non-Volatile RAM Cells with Improved Holding Phase Performance;Journal of Low Power Electronics;2016-09-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP