Gate Modulation Effect in Nano-Scale Epitaxial Aluminum Films on Sapphire Substrate Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Gate Modulation Effect in Nano-Scale Epitaxial Aluminum Films on Sapphire Substrate Grown by Molecular Beam Epitaxy

Published:2022-07-04 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 22nd International Conference on Nanotechnology (NANO)
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Author:

Gao Yu-Yao¹,Wu Jenq-Shinn²,Liu Cheng-Cheng¹,Su Kuan-Jung¹,Wu Pei-Tzu¹,Lo Shun-Tsung³,Wu Chu-Chun¹,Do Thi Hien¹,Lin Sheng-Di¹

Affiliation:

1. Institute of Electronics, National Yang Ming Chiao Tung University,Hsinchu City,Taiwan,30010

2. National Changhwa University of Education,Department of Electronic Engineering

3. National Yang Ming Chiao Tung University,Department of Electrophysics

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9928528/9928587/09928656.pdf?arnumber=9928656

Reference9 articles.

1. Tunable inverse spin Hall effect in nanometer-thick platinum films by ionic gating

2. Electroresistance Effect in Gold Thin Film Induced by Ionic-Liquid-Gated Electric Double Layer

3. Atomic-scale epitaxial aluminum film on GaAs substrate

4. Modulation of spin conversion in a 1.5 nm-thick Pd film by ionic gating

5. Electrical transport in metallic films

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