Hydrogen Iodide (HI) Neutral Beam Etching for InGaN/GaN Micro-LED-Reference-Cited by-同舟云学术

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Hydrogen Iodide (HI) Neutral Beam Etching for InGaN/GaN Micro-LED

Published:2022-07-04 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 22nd International Conference on Nanotechnology (NANO)
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Author:

Ishihara Takahiro¹,Ohori Daisuke¹,Wang Xuelun²,Endo Kazuhiko²,Natori Nobuhiro³,Sato Daisuke³,Li Yiming⁴,Samukawa Seiji⁴

Affiliation:

1. Institute of Fluid Science, Tohoku University,Sendai,Japan,980-8577

2. National Institute of Advanced Industrial Science and Technology,Tsukuba,Japan,305-8568

3. Showa Denko K.K.,Japan,105-8518

4. National Chiao Tung University,Department of Electrical and Computer Engineering,Hsinchu,Taiwan,300

Funder

Japan Science and Technology Agency (JST)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9928528/9928587/09928699.pdf?arnumber=9928699

Reference12 articles.

1. III-nitride blue microdisplays

2. Virtual reality

3. Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma

4. Micro-LED Technologies and Applications

5. Vapor Pressures of Gallium Trifluoride, Trichloride, and Triiodide and Their Standard Sublimation Enthalpies

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Emerging Plasma Nanotechnology;IEEE Open Journal of Nanotechnology;2022

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