Simulation of microcrack effects in dissolution of positive resist exposed by X-ray lithography-Reference-Cited by-同舟云学术

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Simulation of microcrack effects in dissolution of positive resist exposed by X-ray lithography

Published:1988-07 Issue:7 Volume:7 Page:755-764
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Guerrieri R.,Neureuther A.R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

http://xplorestaging.ieee.org/ielx1/43/222/00003946.pdf?arnumber=3946

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Self-regulation Mechanism of the Resist Development Process in Integrated Circuit Fabrication and its Phase-space Picture;Journal of Computer-Aided Materials Design;2005-01

2. Line edge roughness and photoresist percolation development model;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003

3. Patterning Yield of Sub-100-nm Holes Limited by Fluctuation of Exposure and Development Reactions in Synchrotron Radiation Lithography Using Biased Mask Patterns;Japanese Journal of Applied Physics;2000-12-30

4. Surface roughness development during photoresist dissolution;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

5. Negative resist profiles in 248 nm photolithography: experiment, modelling and simulation;Semiconductor Science and Technology;1998-06-01

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