Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- mu m gate length quantum-well HEMT's
Author:
Affiliation:
1. Fraunhofer-Inst. for Appl. Solid-State Phys., Freiburg, Germany
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx1/4/5792/00222183.pdf?arnumber=222183
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Notice of Violation of IEEE Publication Principles A 3.3 V 12.5 Gb/s 0.2 m SiGe BiCMOS Laser Diode Driver Using Bias Current Modulation Cancellation;IEEE Journal of Solid-State Circuits;2007-10
2. Notice of Violation of IEEE Publication Principles - A low voltage 10Gbps SiGe laser diode driver using adaptive RC compensation and common-mode feedback based current generators;2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525);2004
3. Mixed signal integrated circuits based on GaAs HEMTs;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;1998-03
4. Wavelength tuning of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion;IEEE Photonics Technology Letters;1995-09
5. Improved performance from pseudomorphic InyGa/sub 1-y/As-GaAs MQW lasers with low growth temperature AlxGa/sub 1-x/As short-period superlattice cladding;IEEE Photonics Technology Letters;1995-01
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