500-V n-channel insulated-gate bipolar transistor with a trench gate structure-Reference-Cited by-同舟云学术

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500-V n-channel insulated-gate bipolar transistor with a trench gate structure

Published:1989-09 Issue:9 Volume:36 Page:1824-1829
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chang H.-R.,Baliga B.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/1424/00034248.pdf?arnumber=34248

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 600V Insulated Gate Bipolar Transistor Design for Improving Breakdown Voltage in Trench Floating P-Well Charge Storage Layer Gate Bipolar Transistor;2024 7th International Conference on Electronics, Communications, and Control Engineering (ICECC);2024-03-22

2. Improvement Breakdown Voltage by a Using Crown-Shaped Gate;Electronics;2023-01-17

3. Electrical Performances of Insulated Gated Bipolar Transistor (IGBT) in Terms of Bipolar Transistor Driven by Insulated Gate Bias;2020 6th International Conference on Applied System Innovation (ICASI);2020-11-05

4. Modeling of Large Area Trench IGBTs: The Effect of Birds-Beak;IEEE Transactions on Electron Devices;2019-06

5. Evaluation and analysis of the effect of an insulated gated bipolar transistor on the electrical performance of trans-conductance;Engineering Innovation and Design;2019-05-31

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