A Robust Power Gating Structure and Power Mode Transition Strategy for MTCMOS Design-Reference-Cited by-同舟云学术

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A Robust Power Gating Structure and Power Mode Transition Strategy for MTCMOS Design

Published:2007-01 Issue:1 Volume:15 Page:80-89
ISSN:1063-8210
Container-title:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
language:
Short-container-title:IEEE Trans. VLSI Syst.

Author:

Abdollahi Afshin,Fallah Farzan,Pedram Massoud

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Link

http://xplorestaging.ieee.org/ielx5/92/4114352/04114353.pdf?arnumber=4114353

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of Low Power Hybrid Level Shifter using MTCMOS;2023 International Conference on Advances in Electronics, Communication, Computing and Intelligent Information Systems (ICAECIS);2023-04-19

2. Optimum sizing of the sleep transistor in MTCMOS technology;AEU - International Journal of Electronics and Communications;2021-08

3. Comparative Study of Latch Type and Differential Type Sense Amplifier Circuits Using Power Reduction Techniques;Communications in Computer and Information Science;2021

4. Controlling Mode Transition Noise Occurred at Ground Rail in Data Preserving MTCMOS Shift Register;Recent Advances in Power Electronics and Drives;2020-12-04

5. A Novel MTCMOS Stacking Approach to Reduce Mode Transition Energy and Leakage Current in CMOS Full Adder Circuit;Control Applications in Modern Power System;2020-11-27

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