Improving TID Radiation Robustness of a CMOS OxRAM-Based Neuron Circuit by Using Enclosed Layout Transistors

Author:

Vaz Pablo IlhaORCID,Girard PatrickORCID,Virazel ArnaudORCID,Aziza HassenORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Gain-Bandwidth Product Compensation Technique by 16-Unit Tail Current Control for a Radiation Tolerant Preamplifier With 0.9% Amplitude Drop up to 5 Mrad;IEEE Transactions on Instrumentation and Measurement;2024

2. Influence of Electrical Stress on Total Dose Radiation Effect of the Strained Si Nano Nmosfet;2024

3. Testing and Reliability of Spiking Neural Networks: A Review of the State-of-the-Art;2023 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT);2023-10-03

4. Oxide-based Resistive RAM Analog Synaptic Behavior Assessment for Neuromemristive systems;Memristors - the Fourth Fundamental Circuit Element - Theory, Device, and Applications [Working Title];2023-09-29

5. Aspect Ratio Modeling of Radiation-Hardened 8-Shape Enclosed Layout Transistor;IEEE Transactions on Nuclear Science;2023-08

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