A 4–18 GHz, 35 W GaN MMIC Power Amplifier with Improved Thermal Performance-Reference-Cited by-同舟云学术

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A 4–18 GHz, 35 W GaN MMIC Power Amplifier with Improved Thermal Performance

Published:2023-10-16 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Litchfield Michael¹,Kingswood Andrew¹

Affiliation:

1. BAE Systems - Microelectronics,Nashua,New Hampshire,03060

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10310176/10310665/10310907.pdf?arnumber=10310907

Reference8 articles.

1. Novel Power Combining for a 5-18 GHz, 10-21 W, Non-Uniform Distributed Power Amplifier

2. A 1–8GHz Gallium Nitride distributed power amplifier MMIC utilizing a trifilar transformer

3. A 2–20-GHz 10-W High-Efficiency GaN Power Amplifier Using Reactive Matching Technique

4. A Compact 10W 2-20 GHz GaN MMIC Power Amplifier Using a Decade Bandwidth Output Impedance Transformer

5. Design and performance of 16–40GHz GaN distributed power amplifier MMICs utilizing an advanced 0.15 I-lm GaN process;campbell;IEEE MTT-S Int Microw Symp,0

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