Highly efficient 5G linear power amplifiers (PA) design challenges-Reference-Cited by-同舟云学术

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Highly efficient 5G linear power amplifiers (PA) design challenges

Published:2017-04 Issue: Volume: Page:
ISSN:
Container-title:2017 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)
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Author:

Lie D.Y.C.,Mayeda J. C.,Lopez J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7936426/7939640/07939653.pdf?arnumber=7939653

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 18-to-22 GHz 22.8 dBm P_SAT 18.2 dB Gain Power Amplifier in 0.13-μm CMOS SOI;2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM);2024-05-20

2. GaN HEMT for High-performance Applications: A Revolutionary Technology;Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering);2023-09-14

3. Effective Digital Predistortion (DPD) on a Broadband Millimeter-Wave GaN Power Amplifier Using LTE 64-QAM Waveforms;Electronics;2023-06-28

4. An 8.1-W, 50.9% efficient continuous Class-F mode power amplifier developed using 0.25-μm GaN/SiC technology for 5G NR n79 band;IEICE Electronics Express;2023-04-25

5. A Broadband PA Design Based on Bayesian Optimization Augmented by Dynamic Feasible Region Shrinkage;IEEE Microwave and Wireless Components Letters;2022-10

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