Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM-Reference-Cited by-同舟云学术

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Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM

Published:2021-03 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Solomon Paul M.,Bishop Douglas M.,Todorov Teodor K.,Dawes Simon,Farmer Damon B.,Copel Matthew,Lee Ko-Tao,Collins John,Rozen John

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405156.pdf?arnumber=9405156

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Field-Driven Solid-State Defect Control of Bilayer Switching Devices;ACS Applied Materials & Interfaces;2024-08-20

3. Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study;IEEE Transactions on Electron Devices;2024-05

4. Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling;IEEE Transactions on Electron Devices;2024-05

5. Resistive Processing Unit-based On-chip ANN Training with Digital Memory;2024 IEEE 6th International Conference on AI Circuits and Systems (AICAS);2024-04-22

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