A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs-Reference-Cited by-同舟云学术

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A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs

Published:2021-03 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Reliability Physics Symposium (IRPS)
language:
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Author:

Zhou Longda,Zhang Zhaohao,Yang Hong,Ji Zhigang,Liu Qianqian,Zhang Qingzhu,Simoen Eddy,Yin Huaxiang,Luo Jun,Du Anyan,Zhao Chao,Wang Wenwu

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405105.pdf?arnumber=9405105

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique;IEEE Transactions on Electron Devices;2021-09

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