Progress and Current Topics of JEDEC JC-70.1 Power GaN Device Quality and Reliability Standards Activity: Or: What is the Avalanche capability of your GaN Transistor?
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405225.pdf?arnumber=9405225
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design Proposals for High-Voltage Stacked Configuration GaN Module;Electronics;2024-08-13
2. Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
3. Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices;Electronics;2024-01-15
4. On the Abnormal Reduction and Recovery of Dynamic R ON Under UIS Stress in Schottky p-GaN Gate HEMTs;IEEE Transactions on Power Electronics;2023-08
5. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07
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