Mobility Extraction Methods in AlGaN/GaN HEMTs
Author:
Affiliation:
1. São Paulo State University (UNESP),Institute of Science and Technology,Sorocaba,SP,Brasil
2. Ghent University,Ghent,Belgium
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10302454/10302463/10302530.pdf?arnumber=10302530
Reference8 articles.
1. Estudo da Mobilidade em Dispositivos SOI Planares e de Múltiplas Portas;santos;Dissertação de Doutorado,2010
2. Electron mobility in AlGaN/GaN High-Electron Mobility Transistors;panzo;XVI Workshop on Semiconductors and Micro & Nano Technology,2023
3. Comparison of Two DC Extraction Methods for Mobility and Parasitic Resistances in a HEMT
4. A method for extraction of electron mobility in power HEMTs
5. Estudo de Transistores pMOS/nMOS SOI MuGFETs Baseado em Simulações Numéricas 2D e Caracterização Elétrica;gomide;REIC,2013
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