Trade-off between channel length and mechanical stress in the Operational Transconductance Amplifier designed with SOI FinFET
Author:
Affiliation:
1. Sao Paulo State University,UNESP,Sao Joao da Boa Vista,Brazil
2. University of Sao Paulo,LSI/PSI/USP,Sao Paulo,Brazil
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10302454/10302463/10302575.pdf?arnumber=10302575
Reference22 articles.
1. Fin width influence on uniaxial stress of triple-gate SOI nMOSFETs
2. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices
3. On the Influence of Mechanical Stress on FinFET n- and p-MOSFETs;mulaosmanovic;IEEE Transactions on Electron Devices,2020
4. Optimizing mechanical stress for tri-gate FinFET technology;khandelwal;2018 International Conference on Solid State Devices and Materials (SSDM),2018
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