Flip-Chip p(GaN)-i(GaN)-n(AlGaN) Narrowband UV-A Photosensors-Reference-Cited by-同舟云学术

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Flip-Chip p(GaN)-i(GaN)-n(AlGaN) Narrowband UV-A Photosensors

Published:2006-08 Issue:4 Volume:6 Page:964-969
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Ko T.K.,Shei S.C.,Chang S.J.,Su Y.K.,Chiou Y.Z.,Lin Y.C.,Chang C.S.,Chen W.S.,Wang C.K.,Sheu J.K.,Lai W.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx5/7361/34765/01661579.pdf?arnumber=1661579

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-01

2. Annealing effects on electrical, structural, and surface morphological properties of Ir/n-InGaN Schottky structures;physica status solidi (a);2012-06-20

3. Backside illuminated AlGaN-on-Si UV detectors integrated by high density flip-chip bonding;physica status solidi (c);2011-04-21

4. GaN Schottky Barrier Photodetectors Prepared on Patterned Sapphire Substrate;Journal of The Electrochemical Society;2010

5. High responsivity of GaN p-i-n photodiode by using low-temperature interlayer;Applied Physics Letters;2007-10-22

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