Metal-dichalcogenide hetero-TFETs: Are they a viable option for low power electronics?
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/6863838/6872264/06872279.pdf?arnumber=6872279
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Band-to-band tunneling switches based on two-dimensional van der Waals heterojunctions;Applied Physics Reviews;2023-03-01
2. Band structure engineering through van der Waals heterostructing superlattices of two‐dimensional transition metal dichalcogenides;InfoMat;2020-10-04
3. Oxidation Kinetics of WTe2 Surfaces in Different Environments;ACS Applied Electronic Materials;2020-06-28
4. Physical insight and performance metrics of monolayer MX 2 heterojunction TFETs;Micro & Nano Letters;2020-02
5. Ab Initio Simulation of Band-to-Band Tunneling FETs With Single- and Few-Layer 2-D Materials as Channels;IEEE Transactions on Electron Devices;2018-10
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